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| 2SC3679 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3679 900 800 7 5(Pulse10) 2.5 100(Tc=25C) 150 -55 to +150 (Ta=25C) Unit V V V A A W C C Application : Switching Regulator and General Purpose (Ta=25C) sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.5A VCB=10V, f=1MHz 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 75typ External Dimensions MT-100(TO3P) 5.00.2 15.60.4 9.6 2.0 1.8 4.80.2 2.00.1 2SC3679 Unit A A V V MHz pF 20.0min 19.90.3 4.0 a b o3.20.1 4.0max V 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 1.4 sTypical Switching Characteristics (Common Emitter) VCC (V) 250 RL () 125 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.3 IB2 (A) -1 ton (s) 1max tstg (s) 5max tf (s) 1max 5.450.1 B C E 5.450.1 Weight : Approx 6.0g a. Type No. b. Lot No. IC - VCE Characteristics (Typical) 5 VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/I B= 5) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V ) I C - VBE Temperature Characteristics (Typical) 5 (VCE=4V) 700mA 600mA 500mA 2 Collector Current I C (A) 300mA 3 Collector Current I C (A) 4 400 mA 4 3 mp) Temp (Case 25C 200mA ) e Te 2 IB=100mA 1 2 Te m p) 25 C -5 5 C 1 1 V C E( sat) 0 0.03 0.05 0.1 0.5 125C s (C a e 0 0 1 2 3 4 1 5 10 0 0 0.2 0.4 0.6 0.8 -55C (C -55C (Case Temp) 25C (Case Temp) e Temp) 125C (Cas 125C (Cas V B E( sat) ase Tem p) 1.0 1.2 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 10 j - a( C/ W) hFE - IC Characteristics (Typical) t on*t s t g *t f ( s) t on *t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 2 DC Cur rent Gain h F E Transient Thermal Resistance 125C 25C 5 t s tg VCC 250V IC:I B 1: -I B2 =2:0.3:1Const. 1 -55C Switching T im e 0.5 1 0.5 ton 0.2 0.1 0.5 tf 10 5 0.02 0.05 0.1 0.5 1 5 1 5 0.1 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 Collector Curren t I C( A) 10 10 1m Reverse Bias Safe Operating Area 20 100 P c - T a Derating s s s 5 Collector Curren t I C( A) 0m M aximum Power Dissipa ti on P C( W) m 10 10 10 0 s W s ith DC ( Tc In fin 1 0.5 1 0.5 ite =2 5 C) he 50 at si nk 0.1 0.05 Without Heatsink Natural Cooling 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than1% 0.01 5 10 50 100 500 1000 0.01 50 100 500 1000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 68 |
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